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| High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE(sat) t fi TO-247AD (IXSH) = = = = 600 V 55 A 2.5 V 70 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125C RG = 33 W, non repetitive TC = 25C Maximum Ratings G 600 600 20 30 55 30 110 ICM = 60 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W C C C TO-264 (IXSK) C E TO-268 (D3) (IXST) C G E G C E C = Collector TAB = Collector G = Gate E = Emitter Features * International standard packages: JEDEC TO-247, TO-264& TO-268 * Short Circuit SOA capability * High freqeuncy IGBT and antiparallel FRED in one package * New generation HDMOSTM process Applications Mounting torque 1.13/10 Nm/lb.in. 6 300 g C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 7 200 3 100 IC = IC90 2.5 V V mA mA nA V * * * * * BVCES VGE(th) ICES IGES VCE(sat) IC IC = 750 mA, VGE = 0 V = 2.5 mA, VCE = VGE AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages * Space savings (two devices in one package) * Easy to mount with 1 screw (isolated mounting screw hole) * Surface mountable, high power case style * Reduces assembly time and cost * High power density VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. 98518A (7/00) (c) 2000 IXYS All rights reserved 1-2 IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10 3100 240 50 100 30 38 30 30 90 70 0.7 35 35 0.5 150 140 1.2 TO-247 TO-264 0.25 0.15 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.62 K/W K/W K/W Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXSH) Outline gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90; VGE = 15 V VCE = 0.8 VCES; RG = 4.7 W Note 1. Inductive load, TJ = 125C IC = IC90; VGE = 15 V VCE = 0.8 VCES; RG = 4.7 W Note 1 150 120 1.2 1.5 2.49 TO-264 AA (IXSK) Outline Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = IC90, VGE = 0 V Note 2 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 150OC TJ = 150OC 2 35 1.7 2.5 2.5 50 V V A ns Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IF = 100A; VGE = 0 V; TJ = 100C VR = 100 V; -diF/dt = 100 A/ms IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25C 1.0 K/W Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. 2. Pulse test, t 300 ms, duty cycle d 2 % TO-268AA (IXST) (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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